Semiconductor device with recess and fin structure

ABSTRACT

The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island shaped recess gate mask as an etching mask. The Fin channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin channel region and the recess.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 12/323,391, filed on Nov. 25, 2008, which is a division of U.S.patent application Ser. No. 11/414,353, filed on May 1, 2006, now U.S.Pat. No. 7,459,358, which claims priority to Korean patent applicationnumber 10-2006-0006966, filed on Jan. 23, 2006, which is incorporated byreference in its entirety.

BACKGROUND

When a channel length of a cell transistor is decreased, an ionconcentration of a cell channel region is generally increased in orderto maintain a threshold voltage of the cell transistor. An electricfield in source/drain regions of the cell transistor is enhanced toincrease leakage current, which results in degradation of a refreshcharacteristic of a DRAM structure. Therefore, there is a need forsemiconductor devices in which the refresh characteristic is improved.

FIG. 1 is a simplified layout of a conventional semiconductor device,wherein reference numerals 1, 3, and 5 denote an active region, a recessgate region, and a gate region, respectively.

Referring to FIG. 1, a width of the recess gate region 3 is less thanthat of the gate region 5 by a distance 2D. A distance F is the distancebetween the neighboring gate regions 5.

FIGS. 2 a through 2 g are simplified cross-sectional views illustratinga conventional method for fabricating a semiconductor device, whereinFIGS. 2 a(i) through 2 g(i) are cross-sectional views taken along theline I-I′ of FIG. 1, and FIGS. 2 a(ii) through 2 g(ii) arecross-sectional views taken along the line II-II′ of FIG. 1.

Referring to FIG. 2 a, a device isolation structure 20 is formed on asemiconductor substrate 10 having a pad oxide film 13 and a pad nitridefilm 15.

Referring to FIG. 2 b, the pad nitride film 15 is removed. Ionimplantation is performed on the entire surface to form a well and ionimplantation region (not shown) in the semiconductor substrate 10. Aplanarized polysilicon layer 25 is formed on the entire surface of theresultant.

Referring to FIG. 2 c, the polysilicon layer 25 and the pad oxide film13 are etched using a recess gate mask (not shown) as an etching mask toform a polysilicon layer pattern 25 a and a pad oxide film pattern 13 ato define the recess gate region 3 shown in FIG. 1.

Referring to FIG. 2 d, a predetermined thickness of the semiconductorsubstrate 10 in the recess gate region 3 shown in FIG. 1 is etched toform a first recess 35. The polysilicon layer pattern 25 a is removedduring a process for forming the first recess 35. In addition, a siliconhorn is formed at the semiconductor substrate 10 near to the deviceisolation structure 20 because the etching rate of the semiconductorsubstrate 10 near to the device isolation structure 20 is relativelyslower than that of the semiconductor substrate 10 far from the deviceisolation structure 20.

Referring to FIG. 2 e, CVD oxide spacers 40 are formed on sidewalls ofthe first recess 35 and the pad oxide film pattern 13 a. Thesemiconductor substrate 10 exposed at the bottom of the first recess 35is etched by a predetermined thickness to form a second recess 50.

Referring to FIG. 2 f, the spacers 40 and the pad oxide film pattern 13a are removed to expose the semiconductor substrate 10. A gateinsulating film 60 is formed on the exposed semiconductor substrate 10.A planarized gate conductive layer 65 filling up the second recess 50 isformed over the gate insulating film 60. A gate hard mask layer 90 isformed over the gate conductive layer 65. Here, the gate conductivelayer 65 is a stacked structure of a lower gate conductive layer 70 andan upper gate conductive layer 80.

Referring to 2 g, the hard mask layer 90 and the gate conductive layer65 are etched using a gate mask (not shown) as an etching mask to form agate 99. Here, a gate channel region (L1+L2+L3), which is disposed undera storage node junction region 7 to be formed in a subsequent process,includes a vertical channel region L1, L3 and a horizontal channelregion L2.

The subsequent process for forming storage node junction region 7 may bedone by known semiconductor fabrication processes.

According to the above conventional method for fabricating asemiconductor device, the total length (L1+L2+L3) of the gate channelregion is enlarged according to increase in a depth of the verticalchannel region L1, L3 or a width of the horizontal channel region L2. Inparticular, in order to increase the width of the horizontal channelregion L2, the etching process for the second recess may be performedusing an isotropic etching method.

However, increasing the width of the horizontal channel region L2increases a channel resistance. As a result, the total resistance of atransistor is increased. Accordingly, read/write speed characteristicsof the DRAM device are less favorable a driving current of the device isdecreased.

BRIEF SUMMARY

The present invention relates to a semiconductor device and a method forfabricating the same wherein a recess channel region and a Fin channelregion at a lower part of the recess channel region are formed by usingan island shaped recess gate mask which exposes a predetermined regionof a semiconductor substrate and its neighboring device isolationstructure, thereby increasing write/read speed characteristics of thedevice and improving a refresh characteristic of the device.

According to an embodiment of the present invention, a semiconductordevice includes: a device isolation structure formed in a semiconductorsubstrate to define an active region; a recess formed by etching theactive region and its neighboring device isolation structure using anisland shaped recess gate mask as an etching mask; a Fin channel regionformed on the semiconductor substrate at a lower part of the recess; agate insulating film formed over the active region including the Finchannel region and the recess; and a gate electrode formed over the gateinsulating film to fill up the Fin channel region and the recess.

According to another embodiment of the present invention, a method forfabricating a semiconductor device includes: (a) forming a deviceisolation structure in a semiconductor substrate to define an activeregion having a pad insulating film; (b) etching the pad insulating filmto expose the semiconductor substrate; (c) etching a predeterminedthickness of the exposed semiconductor substrate using an island shapedrecess gate mask to form a recess, wherein a Fin channel region isformed at a lower part of the recess; (d) forming a gate insulating filmover the active region including the Fin channel region and the recess;(e) forming a gate conductive layer filling up the Fin channel regionand the recess; (f) forming a gate hard mask layer over the gateconductive layer; and (g) patterning the gate hard mask layer and thegate conductive layer using a gate mask as an etching mask to form agate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified layout of a conventional semiconductor device;

FIGS. 2 a through 2 g are simplified cross-sectional views illustratinga conventional method for fabricating a semiconductor device;

FIG. 3 is a simplified layout of a semiconductor device according to anembodiment of the present invention;

FIG. 4 is a simplified cross-sectional view illustrating a semiconductordevice according to an embodiment of the present invention; and

FIGS. 5 a through 5 h are simplified cross-sectional views illustratinga method for fabricating a semiconductor device according to anembodiment of the present invention.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments of thepresent invention. Wherever possible, the same reference numbers will beused throughout the drawings to refer to the same or like parts. Itshould be appreciated that the embodiments are provided to describe andenable the invention to those skilled in the art. Accordingly, theembodiments described herein may be modified without departing from thescope of the present invention.

FIG. 3 is a simplified layout of a semiconductor device according to anembodiment of the present invention, wherein reference numerals 101,103, and 105 denote an active region defined by the device isolationstructure 120, a recess gate region, and a gate region, respectively.

Referring to FIG. 3, the recess gate region 103 has an island shapedshape, wherein in a longitudinal direction of the active region 101, awidth of the recess gate region 103 is less than that of the gate region105 by a distance 2D, and in a longitudinal direction of the gate region105, a length of the recess gate region 103 is greater than a width ofthe active region 101 by a distance 2E (where 0.ltoreq.D.ltoreq.(⅓)F,0.ltoreq.E.ltoreq.(½)F, and distance F is the distance between theneighboring gate regions 105). In one embodiment of the presentinvention, a shape of the recess gate region 103 includes a closedpolygon such as an ellipse and a rectangle.

FIG. 4 is a simplified cross-sectional view of a semiconductor deviceaccording to an embodiment of the present invention, wherein FIG. 4( i)is a cross-sectional view taken along a longitudinal direction inaccordance with the line I-I′ of FIG. 3 and FIG. 4( ii) is across-sectional view taken along a latitudinal direction in accordancewith the line II-II′ of FIG. 3.

Referring to FIG. 4, a device isolation structure 120 defining theactive region 101 shown in FIG. 3 is formed in a semiconductor substrate110. A recess (not shown) for a recess channel region is formed in thesemiconductor substrate 110 by using a mask defining the recess gateregion 103 shown in FIG. 3. Here, the recess includes a Fin channelregion 155 at the bottom of the recess in a longitudinal direction ofthe gate region 105 shown in FIG. 3 and a recess channel region(L1+L2+L3) at the lower part of the recess in a longitudinal directionof the active region 101 shown in FIG. 3, so that a width of a lowerpart of the recess channel region can be equal to or greater than thatof its upper part. In addition, a gate insulating film 160 is formed onthe semiconductor substrate 110 including the Fin recess channel region155. A gate 199 corresponding the gate region 105 (FIG. 3) is formedover the gate insulating film 160. Gate 199 comprises a stackedstructure of a gate electrode 197 and a gate hard mask layer pattern195. In one embodiment, gate electrode 197 includes a stacked structureof a lower gate electrode 175 and an upper gate electrode 185.

FIGS. 5 a through 5 g are simplified cross-sectional views illustratinga method for fabricating a semiconductor device according to anembodiment of the present invention, wherein FIGS. 5 a(i) through 5 g(i)are cross-sectional views taken along a longitudinal direction inaccordance with the line I-I′ of FIG. 3 and FIGS. 5 a(ii) through 5g(ii) are cross-sectional views taken along a latitudinal direction inaccordance with the line of FIG. 3.

Referring to FIG. 5 a, a pad oxide film 113 and a pad nitride film 115are sequentially formed over a semiconductor substrate 110. Aphotoresist film (not shown) is formed on the pad nitride film 115, andexposed and developed using a device isolation mask (not shown) to forma photoresist film pattern (not shown) defining a device isolationregion 120 shown in FIG. 3. The pad nitride film 115, the pad oxide film113, and a predetermined thickness of the semiconductor substrate 110are etched to form a trench (not shown) defining an active region 101shown in FIG. 3. After the photoresist film pattern is then removed, aninsulating film for device isolation (not shown) filling up the trench.The insulating film for device isolation is planarized until the padnitride film 115 is exposed to form a device isolation structure 120. Inone embodiment, a stacked structure of a thermal oxide film (not shown),a liner nitride film (not shown), and a liner oxide film (not shown) isformed at the interface between the trench and the insulating film fordevice isolation. In addition, the insulating film for device isolationincludes a stacked structure of a first oxide film for device isolation(not shown) and a second oxide film for device isolation (not shown),etching rates of which are relatively different. In another embodiment,the etching rate of the first oxide film for device isolation isrelatively faster than that of the second oxide film for deviceisolation.

Referring to FIG. 5 b, a predetermined thickness of the device isolationstructure 120 is etched to lower the height of the device isolationstructure 120. The pad nitride film 115 and the pad oxide film 113 aresequentially removed to expose the semiconductor substrate 110. A firstoxide film 123 is formed over the exposed semiconductor substrate 110. Aphotoresist film (not shown) is formed over the entire surface of theresultant, and exposed and developed using a mask exposing a cell regionto form a photoresist film pattern (not shown). Impurity ions areimplanted on the entire surface using the photoresist film pattern as anion implantation mask to form a well and channel ion implantation region(not shown) in the semiconductor substrate 110 under the first oxidefilm 123. The photoresist film pattern is then removed. A planarizednitride film 125 and a first hard mask layer 127 are sequentially formedover the entire surface of the resultant. In one embodiment, the firsthard mask layer 127 is made from a polysilicon layer, an amorphousCarbon film, a nitride film, a SiON film, or combinations thereof.

Referring to FIG. 5 c, a photoresist film (not shown) is formed on thefirst hard mask layer 127, and then exposed and developed using a recessgate mask (not shown) to form a photoresist film pattern 133 definingthe recess gate region 103 shown in FIG. 3. Here, a length of the firsthard mask layer 127 exposed under the photoresist film pattern 133 in alongitudinal direction of the gate region 105 shown in FIG. 3 is greaterthan a width of the active region 101, and a width of the first hardmask layer 127 exposed under the photoresist film pattern 133 in alongitudinal direction of the active region 101 shown in FIG. 3 is lessthan a width of the gate region 105 shown in FIG. 3. Next, the exposedhard mask layer 127, the first nitride film 125, and the first oxidefilm 123 are etched using the photoresist film pattern 133 as an etchingmask to expose the semiconductor substrate 110 and the device isolationstructure 120 in the recess gate region 103 shown in FIG. 3. In oneembodiment, a shape of the recess gate mask can include a closed polygonsuch as an ellipse and a rectangle.

In another embodiment, a first photoresist film (not shown) is formedover the first hard mask layer 127 consisting of a stacked structure ofan amorphous Carbon film, a SiON film, and a polysilicon layer, and thenexposed and developed using a mask defining the gate region 105 shown inFIG. 3 to form a first photoresist film pattern (not shown). Thepolysilicon layer of the first hard mask layer 127 is etched using thefirst photoresist film pattern to expose the underlying SiON film. Thefirst photoresist film pattern is then removed. Thereafter, a secondphotoresist film (not shown) is formed over the entire surface of theresultant, and then exposed and developed using a mask defining therecess gate region 103 shown in FIG. 3 to form a second photoresist filmpattern (not shown). The SiON filth, the amorphous Carbon film, thefirst nitride film 125, and the first oxide film 123 are etched usingthe second photoresist film pattern to expose the semiconductorsubstrate 110 and the device isolation structure 120 in the recess gateregion 103 shown in FIG. 3. The second photoresist film pattern isremoved.

Referring to FIG. 5 d, the exposed semiconductor substrate 110 anddevice isolation structure 120 are etched to form a first recess 135defining a recess channel region (not shown). Here, the exposed deviceisolation structure 120 may be etched after a predetermined thickness ofthe exposed semiconductor substrate 110 is etched. The photoresist filmpattern 133 and the first hard mask layer 127 are removed. In oneembodiment, the removing process for the photoresist film pattern 133and the first hard mask layer 127 may be simultaneously performed.

Referring to FIG. 5 e, a second oxide film (not shown) is formed on thesemiconductor substrate and sidewalls of the first oxide film 123, whichare exposed in the first recess 135. A second nitride film (not shown)is formed over the entire surface of the resultant. The second nitridefilm and the second oxide film are etched using a dry etching method toform spacer 140, which includes a stacked structure of a second nitridefilm pattern 145 and a second oxide film pattern 143, on sidewalls ofthe first recess 135. The semiconductor substrate 110 exposed at thebottom of the first recess 135 is etched to form a second recess 150. Inone embodiment of the present invention, the etching process for thesecond recess 150 is performed using an isotropic etching method, sothat the width of a lower part of the second recess 150 can be equal toor greater than that of its upper part. In addition, the shape of thelower part of the second recess 155 is elliptical or circular.

Referring to FIG. 5 f, the device isolation structure 120 exposed at thelower part of the second recess 150 is etched using a wet etching methodto form a Fin active region 155 at the lower part of the second recess155. A third oxide film 153 is formed on the surface of the Fin activeregion 155 and the space 140. Since the upper surface of the spacer 140is the second nitride film pattern 145, a thickness of the third oxidefilm 153 over the spacer 140 is less than that of the third oxide film153 over the Fin active region 155. In one embodiment, the thickness ofthe third oxide film 153 over the spacer 140 ranges from 10 .ANG. to 20.ANG.

Referring to FIG. 5 g, the third oxide film 153 over the spacer 140 isremoved to expose the spacer 140. The second nitride film pattern 145and the first nitride film 125 are removed to expose the second oxidefilm pattern 143 and the first oxide film 123. The exposed second oxidefilm pattern 143 and first oxide film 123 and the third oxide film 153over the Fin active region 155 are removed using a wet etching method toexpose the semiconductor substrate 110 including the Fin active region155. A gate insulating film 160 is formed on the exposed semiconductorsubstrate 110 including the Fin active region 155. A planarized lowergate conductive layer 170 filling up the second recess 150 is formed onthe gate insulating film 160. An upper gate conductive layer 180 and agate hard mask layer 190 are sequentially formed on the lower gateconductive layer 170. In one embodiment, the removing process for thesecond oxide film pattern 143, the first oxide film 123, and the thirdoxide film 153 may be simultaneously performed.

Referring to FIG. 5 h, the gate hard mask layer 190, the upper gateconductive layer 180, and the lower gate conductive layer 170 are etchedusing a gate mask (not shown) as an etching mask to form a gate 199corresponding to gate region 103 (FIG. 3). Here, the gate 199 includes agate hard mask layer pattern 195 and a gate electrode 197, which is astacked structure of an upper gate electrode 185 and a lower gateelectrode 175. Ion implantation is performed using the gate 199 as anion implantation mask to form a LDD region (not shown) in thesemiconductor substrate 110 between the gates 199. In one embodiment,the lower gate conductive layer 170 is made from a polysilicon layer, aSiGe layer, or a stacked structure using a combination thereof. Inanother embodiment, the upper gate conductive layer 180 is made from aTiN film, a WN film, a WSi.sub.x layer, a TiSi.sub.x layer, a Ti layer,a W layer, or combinations thereof.

In addition, subsequent processes such as a process for forming a spaceron a sidewall of the gate, an ion-implantation process for formingsource/drain regions in the active regions, a process for forming alanding plug, a process for forming a bit line contact and a bit line, aprocess for forming a capacitor, and a process for forming aninterconnect may be performed.

As described above, the semiconductor substrate and method forfabricating the same in accordance with an embodiment of the presentinvention provides forming a recess channel region and a Fin channelregion at a lower part of the recess channel region by using an islandshaped recess gate mask which exposes a predetermined region of asemiconductor substrate and its neighboring device isolation structure,thereby reducing channel resistance at the lower part of the recesschannel region. Accordingly, refresh characteristic of DRAM device canbe improved.

In addition, SCE (Short channel effect) of the device is improvedbecause the Fin channel region is formed at the lower part of the recesschannel region. The driving current of the device is increased due to anincreased channel width. Accordingly, the read/write speedcharacteristics of the DRAM structure are improved.

The foregoing description of various embodiments of the invention hasbeen presented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and modifications and variations are possible in light of theabove teachings or may be acquired from practice of the invention. Theembodiments were chosen and described in order to explain the principlesof the invention and its practical application to enable one skilled inthe art to utilize the invention in various embodiments and with variousmodifications as are suited to the particular use contemplated.

1. A method for manufacturing a semiconductor device, the methodcomprising: forming an active region on a semiconductor substrate, theactive region being elongated in a first direction; forming a recess ina channel region of the active region so that a width in the firstdirection of a lower part of the recess is greater than that of an upperpart of the recess; forming a device isolation structure defining theactive region, wherein forming the device isolation structure comprises:etching opposing portions extending in a second direction, which issubstantially orthogonal to the first direction, from the lower part ofthe recess, each etched portion having a depth lower than an uppersurface of the active region, wherein the lower part of the recess has awidth in the second direction that is greater than a width of the upperpart of the recess in the second direction, and wherein a minimum widthof the upper part of the recess in the second direction is greater thana maximum width of the active region in the recess; forming a gateinsulating film over portions of the active region in the recess; andforming a gate electrode over portions of the gate insulating film andfilling the recess and the etched portions.
 2. The method according toclaim 1, wherein the etching opposing portions further comprises etchingopposing portions to have a depth lower than the upper surface of theactive region such that the active region at the bottom of the recessprotrudes in an upward fin shape into the recess.
 3. The methodaccording to claim 1, wherein forming the recess further comprises:forming an upper part with a vertical profile having a first width inthe first direction; and forming a lower part with a curved profileadjacent and immediately below the first part having a second width inthe first direction larger than the first width.
 4. The method accordingto claim 3, wherein the curved profile in the first direction of thelower part of the recess is elliptical or circular.
 5. The methodaccording to claim 3, wherein the etching the opposing portions furthercomprises etching the opposing portions to have a depth lower than theupper surface of the active region such that the active region at thebottom of the lower part of the recess protrudes in an upward fin shapeinto the lower part of the recess.
 6. The method according to claim 1,wherein forming the recess further comprises etching the recess suchthat a minimum width of the recess in the second direction is greaterthan a maximum width in the second direction of the gate insulating filmover active region.
 7. The method according to claim 1, wherein formingthe device isolation structure further comprises forming a stackedstructure of a first liner oxide film, a liner nitride film and afilling oxide film.
 8. The method according to claim 1, wherein formingthe device isolation structure further comprises forming a stackedstructure of a first and second oxide films, each having an etching ratedifferent from the other.
 9. The method according to claim 1, whereinforming the recess further comprises forming the recess such that thewidth of the upper part of the recess in the second direction is greaterthan the maximum width of the active region in recess by a distance 2E,where 0<E<½ F, and a distance F is the distance between neighboring gateregions in the first direction.
 10. The method according to claim 1,wherein the gate insulating film is selected from the group consistingof an oxide film, a nitride film, and combination thereof.
 11. Themethod according to claim 1, wherein the gate electrode is selected fromthe group consisting of a polysilicon film, a titanium nitride film, atungsten film, and combinations thereof.